Описание

Транзистор NP90N04VUG MOSFET
Type Designator: NP90N04VUG
Marking Code: 90N04UG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ — Maximum Power Dissipation: 105 W
|Vds|ⓘ — Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ — Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ — Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ — Maximum Drain Current: 90 A
Tjⓘ — Maximum Junction Temperature: 175 °C
Qgⓘ — Total Gate Charge: 90 nC
trⓘ — Rise Time: 20 nS
Cossⓘ — Output Capacitance: 480 pF
Rdsⓘ — Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-252