Описание
Транзистор G4BC30W IRG4BC30W IGBT N — канал 600V 12A
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
73.7₴
Транзистор G4BC30W IRG4BC30W IGBT N — канал 600V 12A
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
В наличии
Транзистор G4BC30W IRG4BC30W IGBT N — канал 600V 12A
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)