Описание

50T65FDS 50T65FES (MBQ50T65FDS) 650V Field Stop IGBT для сварочных аппаратов

Features
 High Speed Switching & Low Power Loss
 VCE(sat) = 1.85V @ IC = 50A
 Eoff = 0.55mJ @ TC = 25°C
 High Input Impedance
 trr = 80ns (typ.) @diF/dt = 1000A/ μs
 Maximum junction temperature 175°C
Applications
 PFC
 UPS
 PV Inverter

General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides high switching
series and excellent quality.
This device is for PFC, UPS & Inverter applications.
TO-247
 Welder
 IH Cooker