Опис

FEATURES• Low figure-of-merit (FOM) Ron x Qg• Low input capacitance (Ciss)• Reduced switching and conduction losses• Ultra low gate charge (Qg)• Avalanche energy rated (UIS)APPLICATIONS• Server and telecom power supplies• Switch mode power supplies (SMPS)• Power factor correction power supplies (PFC)• Lighting- High-intensity discharge (HID)- Fluorescent ballast lighting• Industrial

• 12A, 650V, RDS(on)=0.54Ω @VGS=10 V
• Low gate charge ( typical 50.5 nC)
• Low Crss ( typical 12pF)
12N65
650V N-Channel MOSFET.
Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability