Опис

Транзистор NP90N04VUG MOSFET
Type Designator: NP90N04VUG
Marking Code: 90N04UG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 105 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 90 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 90 nC
trⓘ – Rise Time: 20 nS
Cossⓘ – Output Capacitance: 480 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-252